Wafer yield prediction method based on improved continuous deep belief network

被引:0
|
作者
Xu H. [1 ]
Zhang J. [1 ]
Lyu Y. [1 ]
Zheng P. [2 ]
机构
[1] Institute of Intelligent Manufacturing, College of Mechanical Engineering, Donghua University, Shanghai
[2] Institute of Intelligent Manufacturing and Information Engineering, School of Mechanical and Power Engineering, Shanghai Jiao Tong University, Shanghai
基金
中国国家自然科学基金;
关键词
Continuous deep belief network; Principal component analysis; Wafer acceptance test parameters; Wafer yield prediction;
D O I
10.13196/j.cims.2020.09.008
中图分类号
学科分类号
摘要
Wafer yield is a key indicator for measuring the quality of semiconductor products. Stable and accurate predictions can help identify defects in wafer processing, improve chip quality and control chip production costs. Due to the influence factors of wafer yield, large data volume and complex data relationship, based on the electrical test parameters in wafer processing, a wafer yield prediction method based on improved continuous deep belief network was proposed. A two-stage data preprocessing method for wafer electrical test parameters was proposed, in which the first stage performed data cleaning on missing values and outliers in the wafer electrical test parameters, and the principal component analysis was performed on the multi-collinearity relationship between wafer electrical test parameters to obtain the input variables of predictive model in the second stage. A wafer yield prediction model was designed based on deep belief network, which realized the automatic extraction of key features by improving the continuous-type restricted Boltzmann machine of the hidden layer, and the error back propagation mechanism of the output layer was used to accurately predict the wafer yield. With the laboratory actual production data, the prediction accuracy of the proposed method and the existing literature method was compared, and the effectiveness of the method was verified. © 2020, Editorial Department of CIMS. All right reserved.
引用
收藏
页码:2388 / 2395
页数:7
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