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On the physical mechanism of negative capacitance effect in ferroelectric FET
被引：0
作者：
Kobayashi, Masaharu
[1
]
机构：
[1] University of Tokyo, System Design Lab (D.lab), School of Engineering, Tokyo, Japan
来源：
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
|
2020年
/
2020-September卷
关键词：
Depletion layer capacitance - Depolarization effects - Ferroelectric gate insulators - Negative capacitance effect - Negative differential resistances - Polarization switching - Sub-threshold swing(ss) - Subthreshold characteristics;
D O I：
9241628
中图分类号：
学科分类号：
摘要：
29
引用
收藏
页码：83 / 87
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