Optoelectronic Properties and Photodetection of Two-dimensional Black Phosphorus

被引：0
|
作者：
Li L. [1 ]
Cong C. [1 ]
机构：
[1] School of Information Science and Technology, Fudan University, Shanghai
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2023年 / 44卷 / 06期
基金：
中国国家自然科学基金; 上海市自然科学基金;
关键词：
black phosphorus; mid-wavelength infrared; optoelectronic devices; two-dimensional materials;
D O I：
10.37188/CJL.20230015
中图分类号：
学科分类号：
摘要：
Mid-wavelength infrared （MWIR） optoelectronic devices can be used for various applications， including thermal imaging， optical communications， and gas sensing. Owing to the direct bandgap at all thicknesses and high carrier mobility， two-dimensional black phosphorus （BP） is promising for room-temperature mid-wavelength infrared optoelectronic applications. The intrinsic crystal anisotropy of such two-dimensional material also offers an exciting opportunity for the application in linear-polarization-sensitive photodetection. Furthermore， the electronic and optical properties of black phosphorus can be effectively modulated by doping， strain and fabrication of Van der Waals heterostructures， which is advantageous to meet the numerous demands for functional optoelectronic applications. Here we review the essential properties of two-dimensional black phosphorus and discuss the potential applications of black phosphorus in functional mid-wavelength infrared optoelectronic devices. Finally， some of the challenges and future outlooks of BP-based applications in mid-infrared optoelectronic devices are discussed and sug⁃ gested. © 2023 Chines Academy of Sciences. All rights reserved.
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页码：995 / 1005
页数：10
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