Hot-zone design and optimization of resistive heater for SiC single crystal growth

In recent years, SiC single crystal growth technology has been developed toward larger size and thickness to reduce the cost of SiC-based power devices. Resistance heating has gradually become a hot spot for research because the crystals grown by the induction heating display the disadvantages of high stress and defect density. In this paper, the design of resistance heaters for SiC crystal growth was thoroughly investigated via numerical simulation. A simulation of the thermal field generated by different resistive heater arrangements was performed. The stress and dislocation distribution in crystals under different growth conditions were studied. Based on the comprehensive requirements of a small radial temperature gradient and a large growth rate, the arrangement and length of the resistance heater were proposed. This study would serve as a useful guidance for the study of SiC growth by resistive heating.