Planar tunneling Hall effect in two-layer system

被引：1

作者：

Zhuravlev, Mikahil ^{[1
]}

Alexandrov, Artem ^{[2
]}

Vedyayev, Anatoly ^{[3
]}

机构：

[1] St Petersburg State Univ, St Petersburg 190034, Russia

[2] Moscow Inst Phys & Technol, Moscow 141700, Dolgoprudny, Russia

[3] Lomonosov Moscow State Univ, Moscow 119991, Russia

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2024年 / 595卷

关键词：

planar Hall effect; spin Hall current; Spin accumulation; Ferroelectric barrier; MAGNETORESISTANCE;

D O I：

10.1016/j.jmmm.2023.171551

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate planar Hall effect and related phenomena in the two-layer system consisting of ferroelectric barrier with spin-orbit coupling and thin ferromagnetic layers. We demonstrate that planar Hall effect in this system is a size effect which originates from finite thickness of ferromagnetic layer and spin-orbit coupling linear in wave number in the barrier. Our calculations reveal that Hall current, spin Hall current and spin accumulation in the barrier layer as well as in the ferromagnetic layer can be manipulated by the reversal of electrical polarization of the barrier and by changing the direction of magnetization of ferromagnetic layer.

引用

页数：4

共 19 条

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