Excitation of THz plasmonic eignmode of parallel plain waveguide by using GaAs material

被引：0

作者：

Sandeep ^{[1
,2
]}

Malik, Hitendra K. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Plasma Sci & Technol Lab, New Delhi 110016, India

[2] Univ Delhi, Deen Dayal Upadhyaya Coll, Dept Phys, New Delhi 110078, India

来源：

RESULTS IN OPTICS | 2023年 / 12卷

关键词：

GaAs structure; Surface plasma wave; TM Mode; Terahertz radiation; Absorption; Waveguide; Distorsion; TERAHERTZ RADIATION; FIELD;

D O I：

10.1016/j.rio.2023.100457

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A Terahertz wave incident on waveguide made up of two parallel thin metal plates sandwiching a thin region of GaAs semiconductor, excites a surface plasma wave (SPW), at the metal-semiconductor interface. As the frequency of SPW increases the real part of the propagation vector increases linearly where the imaginary part of the propagation vector decay parabolically. It is also observed that the distortion of the pulse due to the Terahertz wave (THz) has different component of different phase velocity. The proposed methodology entails the generation of terahertz plasmonic eigenmodes within a parallel planar waveguide composed of GaAs material. The areas of focus in this field include THz Waveguiding and Routing, THz Modulators and Switches, THz Sensing and Imaging and THz Integrated Photonics.

引用

页数：6