High Spatial Resolution 2D Imaging of Current Density and Pressure for Graphene Devices under High Pressure Using Nitrogen-Vacancy Centers in Diamond

被引:0
作者
Zhong, Cheng [1 ]
Wang, Yupeng [1 ]
Mai, Di [1 ]
Ye, Chunhui [1 ]
Li, Xiangdong [1 ]
Wang, He [1 ]
Dai, Rucheng [3 ]
Wang, Zhongping [2 ]
Sun, Xiaoyu [2 ]
Zhang, Zengming [3 ,4 ]
机构
[1] Univ Sci & Technol China, Sch Phys Sci, Dept Phys, Deep Space Explorat Lab, Hefei 230026, Peoples R China
[2] Univ Sci & Technol China, Ctr Phys Expt, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, Ctr Phys Expt, Deep Space Explorat Lab, Hefei 230026, Anhui, Peoples R China
[4] Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
current density imaging; graphene device; highpressure; diamond NV center; quantum sensing; SCANNING SQUID MICROSCOPY; SPIN; MAGNETOMETER; RESONANCE;
D O I
10.1021/acs.nanolett.4c00780
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Current density imaging is helpful for discovering interesting electronic phenomena and understanding carrier dynamics, and by combining pressure distributions, several pressure-induced novel physics may be comprehended. In this work, noninvasive, high-resolution two-dimensional images of the current density and pressure gradient for graphene ribbon and hBN-graphene-hBN devices are explored using nitrogen-vacancy (NV) centers in diamond under high pressure. The two-dimensional vector current density is reconstructed by the vector magnetic field mapped by the near-surface NV center layer in the diamond. The current density images accurately and clearly reproduce the complicated structure and current flow of graphene under high pressure. Additionally, the spatial distribution of the pressure is simultaneously mapped, rationalizing the nonuniformity of the current density under high pressure. The current method opens a significant new avenue to investigate electronic transport and conductance variations in two-dimensional materials and electrical devices under high pressure as well as for nondestructive evaluation of semiconductor circuits.
引用
收藏
页码:4993 / 5001
页数:9
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