Construction of nanorod-shaped TiO2/Cu3N p-n heterojunction for efficient visible-light hydrogen evolution

被引:6
作者
Cheng, Zhengwang [1 ]
Gan, Neng [1 ]
Yuan, Gang [2 ]
Wang, Aobo [1 ]
Liu, Jiyan [3 ]
Lv, Hui [1 ]
Han, Changcun [1 ]
Wang, Mei [1 ]
Luoshan, Mengdai [1 ]
Ma, Xinguo [1 ]
Zou, Wei [1 ]
机构
[1] Hubei Univ Technol, Sch Sci, Wuhan 430068, Peoples R China
[2] Cent South Univ, Sch Mat Sci & Engn, Changsha 410083, Peoples R China
[3] Jianghan Univ, Key Lab Optoelect Chem Mat & Devices, Minist Educ, Wuhan 430056, Peoples R China
关键词
TIO2; CU3N; PERFORMANCE; FABRICATION; WATER;
D O I
10.1039/d4tc00916a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Developing highly efficient and low-cost photoelectrocatalyst for H-2 evolution under visible-light irradiation is a key topic in the areas of energy and environment. In this work, we designed and deposited p-type semiconductor Cu3N onto 1D n-type rutile TiO2 nanorod array by the magnetron sputtering method. The formed TiO2/Cu3N p-n heterojunction not only exhibits a narrowed band gap from 3.09 eV for TiO2 to 2.01 eV for TiO2/Cu3N but also expands the light-response from UV to visible-light region. In addition, the lifetime, separation and transfer of the photogenerated electron-hole pairs are efficiently prolonged and improved due to the build-in electric field at the interface of the TiO2/Cu3N p-n heterojunction. As a result, the photocurrent density under >420 nm visible-light irradiation is enhanced for about 14.12 times, from -0.33 mA cm(-2) for TiO2 to -4.66 mA cm(-2) for TiO2/Cu3N at -0.97 V vs. RHE (reversible hydrogen electrode). Furthermore, the constructed TiO2/Cu3N heterojunction shows stable PEC H-2 evolution performance, with the H-2 production rate reaching 6.98 mu mol cm(-2) h(-1) under >420 nm visible-light irradiation. Our results suggest that the construction of nontoxic p-n heterojunction with suitable band gap should be a promising strategy to improve the photoelectrocatalytic performance of TiO2 and should be applied in other photoelectrocatalysts.
引用
收藏
页码:7366 / 7376
页数:11
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