Patterning of Sc0.3Al0.7N Film for Piezoelectric MEMS Devices

被引：1

作者：

Quek, Zhan Jiang ^{[1
]}

Li, Minghua ^{[1
]}

Hong, Yan ^{[1
]}

Lim, Yijun ^{[1
]}

Lin, Huamao ^{[1
]}

机构：

[1] ASTAR, Inst Microelect IME, Singapore, Singapore

来源：

2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF | 2023年

关键词：

Piezoelectric Sc0.3Al0.7N; dry plasma etching;

D O I：

10.1109/ISAF53668.2023.10265557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Piezoelectric coefficient in ScxAl1-xN was reported to increase as scandium- doping x increases up to 43%. However, the patterning of Sc0.3Al0.7N film for the fabrication of piezoelectric micro-electromechanical systems (MEMS) devices poses challenges such as low etch rate, uncontrollable sidewall profile, micro-trenching, and significant bottom molybdenum (Mo) electrode loss. In this work, engineering of the sidewall profile by etch byproduct redeposition through plasma etch parameters and development of ScxAl1-xN etch with a soft landing on the bottom Mo electrode was investigated. Post-etch analysis on the exposed Sc0.3Al0.7N sidewall was also performed to validate any presence of conducting residues and surface oxidation.

引用

页数：3

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