Electrical properties and field emission characteristics of ITO nanorod thin films synthesized by electron beam physical vapor deposition

被引：0

作者：

An, Zhongfen ^{[1
]}

Shen, Yan ^{[1
]}

Xu, Xiangang ^{[2
]}

Shi, Feng ^{[1
]}

Song, Fuzhou ^{[1
]}

Yu, Yingbo ^{[1
]}

Dong, Jingxuan ^{[1
]}

Xu, Yue ^{[1
]}

Zhang, Lingcui ^{[1
]}

Zhao, Jinbo ^{[1
]}

机构：

[1] Qilu Univ Technol, Shandong Acad Sci, Sch Mat Sci & Engn, Jinan 250353, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

JOURNAL OF NANOPARTICLE RESEARCH | 2024年 / 26卷 / 06期

基金：

中国国家自然科学基金;

关键词：

ITO nanorod thin films; Electron beam physical vapor deposition electrical properties; Field emission characteristics; Growth mechanism; INDIUM-TIN-OXIDE;

D O I：

10.1007/s11051-024-06044-w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

One-dimensional nanostructures, especially those with high aspect ratios, are suitable materials for fabricating field emitters. Indium tin oxide (ITO) nanorod thin films were successfully synthesized on GaAs substrates using electron beam physical vapor deposition. Subsequently, the morphologies and crystal structures of the samples were analyzed in detail. Characterizations showed that the nanorods were 30.06-49.20 nm in diameter with highly crystalline cubic indium oxide structures. The electrical properties, field emission characteristics, and stability of the samples were measured, exhibiting the conductivity of a semiconductor. The field emission threshold electric field of the samples was about 5.72 V/mu m when the current density was 0.01 mA/cm2, and the maximum current density was 0.937 mA/cm2 when the electric field was 14.19 V/mu m. The fluctuation of field emission electric current was less than 7%, implying that a stable current density was emitted. That is, good field emission characteristics were obtained in the ITO nanorod thin film samples. Finally, the growth mechanism of the samples was analyzed in brief based on the vapor-liquid-solid (VLS) synthesis.

引用

页数：9