Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data
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do Nascimento Tolêdo, Rodrigo
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LSI/PSI/USP, University of Sao Paulo, Sao Paulo, BrazilLSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
do Nascimento Tolêdo, Rodrigo
[1
]
de Lima Silva, Wenita
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LSI/PSI/USP, University of Sao Paulo, Sao Paulo, BrazilLSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
de Lima Silva, Wenita
[1
]
Gonçalez Filho, Walter
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LSI/PSI/USP, University of Sao Paulo, Sao Paulo, BrazilLSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
Gonçalez Filho, Walter
[1
]
de Moraes Nogueira, Alexandro
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LSI/PSI/USP, University of Sao Paulo, Sao Paulo, BrazilLSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
de Moraes Nogueira, Alexandro
[1
]
Antonio Martino, Joao
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LSI/PSI/USP, University of Sao Paulo, Sao Paulo, BrazilLSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
Antonio Martino, Joao
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]
Ghedini Der Agopian, Paula
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LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
UNESP, Sao Paulo State University, Sao Joao da Boa Vista, BrazilLSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
Ghedini Der Agopian, Paula
[1
,2
]
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[1] LSI/PSI/USP, University of Sao Paulo, Sao Paulo, Brazil
[2] UNESP, Sao Paulo State University, Sao Joao da Boa Vista, Brazil