A novel extended gate ISFET design for biosensing application compatible with standard CMOS

被引：8

作者：

Gubanova, Oksana ^{[1
]}

Poletaev, Andrey ^{[1
]}

Komarova, Natalia ^{[1
]}

Grudtsov, Vitaliy ^{[1
]}

Ryazantsev, Dmitriy ^{[1
]}

Shustinskiy, Mark ^{[1
]}

Shibalov, Maxim ^{[1
]}

Kuznetsov, Alexander ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Nanotechnol Microelect, Moscow, Russia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2024年 / 177卷

关键词：

CMOS; Extended gate field-effect transistor; ISFET; High-k dielectric; Biosensor; Tyrosinase; Phenol; FIELD-EFFECT TRANSISTOR; ATOMIC LAYER DEPOSITION; KINETIC CHARACTERIZATION; TYROSINASE-BIOSENSOR; MUSHROOM TYROSINASE; OXIDATION; REAGENT; FILMS;

D O I：

10.1016/j.mssp.2024.108387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a novel design of ISFET, which uses a hafnium oxide-coated aluminum pad surface as a floating/extended gate. The design was realized using standard CMOS technology followed by BEOL post treatment. The ISFET was designed to operate in subthreshold mode and has subthreshold slope of 108 mV/dec, pH sensitivity of 55 mV/pH and temporal stability 0.008 mV/min. Based on the ISFET, an enzymatic biosensor for detection of phenols in real samples was demonstrated. The reported design allows to significantly improve the internal characteristics of ISFET, leading to predictable high-performance biosensors formed on a basis of standard CMOS-technology.

引用

页数：11

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