Nanosized tin dioxide based semiconductor materials for creation of gas sensors

被引：1

作者：

Oleksenko, Luidmila P. ^{[1
]}

Symonenko, Yelizaveta O. ^{[1
]}

Fedorenko, George V. ^{[2
]}

Maksymovych, Nelly P. ^{[1
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Dept Chem, Volodymyrska Str 64-13, UA-01601 Kiev, Ukraine

[2] Natl Acad Sci Ukraine, LV Pisarzhevsky Inst Phys Chem, Kiev, Ukraine

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2024年 / 768卷 / 07期

关键词：

Nanosized materials; semiconductor sensors; sensitivity to hydrogen; sol-gel synthesis; tin dioxide; SNO2; ADDITIVES; FILMS;

D O I：

10.1080/15421406.2024.2348172

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanosized initial semiconductor tin dioxide based material was synthesized by a sol-gel technique and characterized by XRD, IR-spectroscopy, DTA-DTG and TEM methods. Nanosized SnO2-based sensor materials were prepared using the pastes with different quantities of tin dioxide and carboxymethyl cellulose and formatted at various temperatures. It was found that the compositions of the pastes significantly affect the characteristics of the sensors obtained on their base. The characteristics of the sensors of different compositions were explained by necessity of the presence of sufficient number of contacts between the nanoparticles of the sensor material, which ensure the electrical conductivities of the sensors.

引用

页码：1 / 8

页数：8

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