Observation of electrical characteristics of MoS2 thin films synthesized by langmuir-blodgett method in pure water solvent

被引：0
作者：
Cho D.-H. [3 ]
Lee S.-K. [4 ]
Lee C. [1 ,2 ]
机构：
[1] Dept. of Mechanical Engineering, Sungkyunkwan University
[2] SKKU Advanced Institute of NAnotechnology, Sungkyunkwan University
[3] Department of Mechatronics Engineering, Gyeongnam National University of Science and Technology
[4] Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology
来源：
Transactions of the Korean Institute of Electrical Engineers | 2019年 / 68卷 / 02期
关键词：
Electrical characteristics; Langmuir-blodgett method; MoS2; Transistor;
D O I：
10.5370/KIEE.2019.68.2.313
中图分类号：
学科分类号：
摘要：
In this study, nanometer-thick molybdenum disulfide (MoS2) films were fabricated by Langmuir-Blodgett method and morphological characteristics and electrical properties were observed. The thickness of the thin films measured by AFM was about 10 nm, and the sheets constituting the thin films had a width of 100-400 nm in the plane direction. This means that micrometer-level molybdenum disulfide powder is dispersed in pure water through ultrasonic waves and self-assembled in the form of a thin film from nano-sheets by the Langmuir-Blodgett method. Raman spectra of the thin films showed that the nanometer-thick molybdenum disulfide films were obtained without the chemical change of the molybdenum disulfide. We conclude that the MoS2 films fabricated by Langmuir-Blodgett method have semiconducting property from the measurement of 2.5 times amplified current than dark state (at 0.5 V). Furthermore, we analyze the electrical properties of MoS2 film by measuring channel current depend on gate voltage. From the conventional I-V characteristic, we confirm that the MoS2 film has n-type semiconducting characteristic. ? The Korean Institute of Electrical Engineers. Copyright ⓒ The Korean Institute of Electrical Engineers.
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页码：313 / 317
页数：4
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