Electronic structure of graphene/Y2C heterostructure and related doping effect

被引:6
作者
Choi, Chang-Gyu [1 ]
Kim, Junghwan [1 ]
Choi, Hyeong-Kyu [1 ]
Cha, Janghwan [1 ]
Hong, Suklyun [1 ]
机构
[1] Sejong Univ, Graphene Res Inst, Dept Phys, GRI TPC Int Res Ctr, Seoul 05006, South Korea
基金
新加坡国家研究基金会;
关键词
Yttrium hypocarbide; Graphene; Electride; Heterostructure; Doping effect; DFT calculations; TOTAL-ENERGY CALCULATIONS; AB-INITIO; 2-DIMENSIONAL ELECTRIDE; MOLECULAR ADSORBATES; GAS; NITRIDE; SURFACE; GROWTH; SPACE;
D O I
10.1016/j.cap.2021.04.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Until now, many attempts have been made to dope graphene in various ways, but each method turned out to have pros and cons. In this study, to overcome the limitations of doping methods, yttrium hypocarbide (Y2C) is investigated as one prospective material to dope graphene, using density functional theory calculations. In monolayer Y2C, the anionic electrons localized away from Y atomic layers are confirmed to contribute to occupied states near the Fermi level. Next, we investigate the electronic structure of graphene in heterojunction with Y2C. Anionic electrons of Y2C occupy the empty states of graphene in graphene/Y2C heterostructure, which makes the Dirac cone of graphene located at about 1.7 eV below the Fermi level. Such charge transfer of anionic electrons to graphene and the flatness of electric cloud of anionic electrons leads to evenly n-doped graphene in graphene/Y2C heterostructure. This suggests that Y2C is a good candidate to dope graphene.
引用
收藏
页码:13 / 18
页数:6
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