A new stacked gate oxide L-shaped tunnel field effect transistor

In this paper, a new stacked gate oxide L-shaped Tunnel Field Effect Transistor (LTFET) is proposed. The stacked gate oxide structure incorporates high-k and SiO2 dielectrics. The high-k dielectric, specifically, contributes to a robust electric field at the source/channel junction. This augmented electric field results in more energy band bending and a thinner tunneling barrier. As a result, the proposed device shows the drain current of 0.224 mA/mu m, OFF-current of 1.3 x 10-17 A/mu m, threshold voltage of 0.62 V and average subthreshold swing of 34 mV/decade, in comparison with the conventional LTFET. Moreover, this paper demonstrates the role of both Shockley-Read-Hall generation and trap assisted tunneling in the subthreshold swing degradation due to the existence of trap inside the silicon band gap.