Light soaking of hydrogenated amorphous silicon: a short review

被引：2
|
作者：
Wang, Na [1 ,2 ]
Meng, Fanying [1 ]
Zhang, Liping [1 ]
Liu, Zhengxin [1 ,2 ]
Liu, Wenzhu [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Res Ctr New Energy Technol RCNET, Natl Key Lab Mat Integrated Circuits, Shanghai, Peoples R China
[2] Univ Chinese Acad Sci UCAS, Beijing 100049, Shijingshan, Peoples R China
来源：
CARBON NEUTRALITY | 2024年 / 3卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Hydrogenated amorphous silicon; Silicon solar cells; Light soaking; Dangling bonds; A-SI-H; INDUCED DEGRADATION; DANGLING BONDS; SOLAR-CELLS; CONDUCTIVITY CHANGES; METASTABLE DEFECTS; COLLISION MODEL; EFFICIENCY; STRESS; RECOVERY;
D O I：
10.1007/s43979-024-00093-9
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
Hydrogenated amorphous silicon (a-Si:H) has a long history in the development of photovoltaics, especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells. More than 40 years ago, Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking. This phenomenon has been widely investigated for electronic applications. In contrast to that, we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network. Here we survey these two photoelectronic effects, and discuss their implementations to silicon solar cells.
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页数：10
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