Light soaking of hydrogenated amorphous silicon: a short review

被引：2

作者：

Wang, Na ^{[1
,2
]}

Meng, Fanying ^{[1
]}

Zhang, Liping ^{[1
]}

Liu, Zhengxin ^{[1
,2
]}

Liu, Wenzhu ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Res Ctr New Energy Technol RCNET, Natl Key Lab Mat Integrated Circuits, Shanghai, Peoples R China

[2] Univ Chinese Acad Sci UCAS, Beijing 100049, Shijingshan, Peoples R China

来源：

CARBON NEUTRALITY | 2024年 / 3卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Hydrogenated amorphous silicon; Silicon solar cells; Light soaking; Dangling bonds; A-SI-H; INDUCED DEGRADATION; DANGLING BONDS; SOLAR-CELLS; CONDUCTIVITY CHANGES; METASTABLE DEFECTS; COLLISION MODEL; EFFICIENCY; STRESS; RECOVERY;

D O I：

10.1007/s43979-024-00093-9

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) has a long history in the development of photovoltaics, especially in the research field of a-Si:H thin-film solar cells and crystalline/amorphous silicon heterojunction solar cells. More than 40 years ago, Staebler and Wronski reported conductance decrease of a-Si:H induced by light soaking. This phenomenon has been widely investigated for electronic applications. In contrast to that, we found light soaking can also improve dark conductance of a-Si:H when boron or phosphorus atoms are doped into the amorphous network. Here we survey these two photoelectronic effects, and discuss their implementations to silicon solar cells.

引用

页数：10

共 50 条

[1] Light soaking in thermally quenched hydrogenated amorphous silicon
Agarwal, P
Agarwal, SC
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 296 - 300
[2] EFFECT OF LIGHT SOAKING ON THE SHORT-WAVELENGTH PHOTORESPONSE IN HYDROGENATED AMORPHOUS-SILICON
GHOSH, S
GANGULY, G
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) : 5896 - 5898
[3] PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
ROSSI, MC
BRANDT, MS
PHYSICAL REVIEW B, 1994, 50 (16): : 11592 - 11605
[4] Structural disorder induced in hydrogenated amorphous silicon by light soaking
Gibson, JM
Treacy, MMJ
Voyles, PM
Jin, HC
Abelson, JR
APPLIED PHYSICS LETTERS, 1998, 73 (21) : 3093 - 3095
[5] Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon
Kamei, T
Hata, N
Matsuda, A
Uchiyama, T
Amano, S
Tsukamoto, K
Yoshioka, Y
Hirao, T
APPLIED PHYSICS LETTERS, 1996, 68 (17) : 2380 - 2382
[6] EFFECT OF LIGHT SOAKING ON THE PHOTOCONDUCTIVITY AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
ZHOU, JH
ELLIOTT, SR
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 66 (06): : 801 - 817
[7] Mechanical Spectroscopy Study on the Light Soaking Effect on Hydrogenated Amorphous Silicon
Mizubayashi, H.
Sakata, I.
Tanimoto, H.
INTERNAL FRICTION AND MECHANICAL SPECTROSCOPY, 2012, 184 : 416 - +
[8] EFFECT OF LIGHT SOAKING ON THE LOW TEMPERATURE PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS SILICON.
Vanier, P.E.
Solar Cells: Their Science, Technology, Applications and Economics, 1982, 9 (1-2): : 85 - 93
[9] DANGLING BOND CREATION IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT-SOAKING
SHIRAFUJI, J
SHIRAKAWA, K
NAGATA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (08): : L634 - L636
[10] SATURATION OF THE DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON BY PULSED-LIGHT SOAKING
HATA, N
GANGULY, G
WAGNER, S
MATSUDA, A
APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1817 - 1819

← 1 2 3 4 5 →