First-Principle Calculations to Investigate Structural, Electronic, and Magnetic Properties of Noble Metal-Doped CdS/Se

被引:0
作者
Elkeurti, F. [1 ]
Adli, W. [1 ]
Doumin, B. [1 ]
机构
[1] Univ Sci & Technol Oran USTO, Fac Phys, Dept Genie Phys, Lab Anal & Applicat Rayonnements, BP1505 El Mnaouer, Oran 31000, Algeria
关键词
mBJ Potential; Half-metallic ferromagnets; Ferromagnetic semiconductors; p-d hybridization; Spintronic; ROOM-TEMPERATURE FERROMAGNETISM; 1ST PRINCIPLES; CDSE; CO; SEMICONDUCTORS; ALLOYS; ZNS;
D O I
10.1007/s10948-024-06743-4
中图分类号
O59 [应用物理学];
学科分类号
摘要
This research aims to employ a first-principles approach based on density functional theory (DFT) to predict the structural, electronic, and magnetic attributes of CdMX compounds, where M represents Ru, Rh, or Pd, and X represents either S or Se. We utilized the modified Beck-Johnson potential, combined with the generalized gradient approximation (mBJGGA), to scrutinize the electronic and magnetic features of these compounds. The results reveal robust magnetic ground states for M-doped CdX. The analysis of spin-polarized band structures and densities of states indicates that CdRuX and CdPdXcompounds exhibit half-metallic ferromagnetism, characterized by complete spin polarization of 100% at the Fermi level. Conversely, CdRhX compounds exhibit the properties of ferromagnetic semiconductors. For Ru, Rh, and Pd-doped CdX, an integer-integrated total magnetic moment is observed, corresponding to 4, 3, and 2 mu(B), respectively, with the primary contri-bution stemming from the doping atom and its four nearest neighboring X atoms. This ferromagnetic behavior is attributed to the strong p-d hybridization occurring between the states of the host X ions and the M impurity ion. Consequently, the outcomes of our study render these alloys as suitable materials for possible spintronic devices.
引用
收藏
页码:921 / 931
页数:11
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