Scrutinizing transport phenomena and recombination mechanisms in thin film Sb2S3 solar cells

被引：17

作者：

Younsi, Z. ^{[1
]}

Meddour, F. ^{[1
]}

Bencherif, H. ^{[1
]}

Hossain, M. Khalid ^{[2
,3
]}

Marasamy, Latha ^{[4
]}

Sasikumar, P. ^{[5
]}

Revathy, M. S. ^{[6
]}

Ghotekar, Suresh ^{[7
]}

Karim, Mohammad R. ^{[8
]}

Ayyar, Manikandan ^{[9
]}

Haldhar, Rajesh ^{[10
]}

Rubel, Mirza H. K. ^{[11
]}

机构：

[1] LEREESI, Lab HNS RE2SD, Batna 05078, Algeria

[2] Bangladesh Atom Energy Commiss, Atom Energy Res Estab, Inst Elect, Dhaka 1349, Bangladesh

[3] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Dept Adv Energy Engn Sci, Fukuoka 8168580, Japan

[4] Univ Autonoma Queretaro, Fac Quim, Mat Energia, Santiago De Queretaro 76010, Queretaro, Mexico

[5] Saveetha Inst Med & Tech Sci, Saveetha Sch Engn, Dept Phys, Chennai 602105, India

[6] Kalasalingam Acad Res & Educ, Sch Adv Sci, Dept Phys, Krishnankoil 626126, Tamil Nadu, India

[7] Chettinad Acad Res & Educ, Chettinad Hosp & Res Inst, Ctr Herbal Pharmacol & Environm Sustainabil, Kelambakkam 603103, Tamil Nadu, India

[8] King Saud Univ, Coll Engn, Dept Mech Engn, Riyadh 11421, Saudi Arabia

[9] Karpagam Acad Higher Educ, Ctr Mat Chem, Dept Chem, Coimbatore 641021, Tamil Nadu, India

[10] Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South Korea

[11] Univ Rajshahi, Dept Mat Sci & Engn, Rajshahi 6205, Bangladesh

来源：

SCIENTIFIC REPORTS | 2024年 / 14卷 / 01期

关键词：

Sb2S3 solar cells; Recombination mechanisms; Analytical modeling; Device optimization; EFFICIENCY; ABSORBER; TEXTURIZATION; DESIGN; IMPACT;

D O I：

10.1038/s41598-024-56041-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The Schockley-Quisser (SQ) limit of 28.64% is distant from the Sb2S3 solar cells' record power conversion efficiency (PCE), which is 8.00%. Such poor efficiency is mostly owing to substantial interface-induced recombination losses caused by defects at the interfaces and misaligned energy levels. The endeavor of this study is to investigate an efficient Sb2S3 solar cell structure via accurate analytical modeling. The proposed model considers different recombination mechanisms such as non-radiative recombination, Sb2S3/CdS interface recombination, Auger, SRH, tunneling-enhanced recombination, and their combined impact on solar cell performance. This model is verified against experimental work (Glass/ITO/CdS/Sb2S3/Au) where a good coincidence is achieved. Several parameters effects such as thickness, doping, electronic affinity, and bandgap are scrutinized. The effect of both bulk traps located in CdS and Sb2S3 on the electrical outputs of the solar cell is analyzed thoroughly. Besides, a deep insight into the effect of interfacial traps on solar cell figures of merits is gained through shedding light into their relation with carriers' minority lifetime, diffusion length, and surface recombination velocity. Our research findings illuminate that the primary contributors to Sb2S3 degradation are interfacial traps and series resistance. Furthermore, achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device versus the interfacial traps. In our study, the optimized solar cell configuration (Glass/ITO/CdS/Sb2S3/Au) demonstrates remarkable performance, including a high short-circuit current (J(SC)) of 47.9 mA/cm(2), an open-circuit voltage (V-OC) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. Beyond its superior performance, the optimized Sb2S3 solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/Sb2S3 junction. This improved reliability can be attributed to our precise control of band alignment and the fine-tuning of influencing parameters.

引用

页数：19