Extraordinary Thermoelectric Properties of Topological Surface States in Quantum-Confined Cd3As2 Thin Films

被引:7
作者
Ouyang, Wenkai [1 ]
Lygo, Alexander C. [2 ]
Chen, Yubi [1 ]
Zheng, Huiyuan [3 ]
Vu, Dung [4 ]
Wooten, Brandi L. [4 ]
Liang, Xichen [1 ]
Heremans, Joseph P. [4 ]
Stemmer, Susanne [2 ]
Liao, Bolin [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mech Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA
[3] Univ Hong Kong, Dept Phys, Hong Kong 999077, Peoples R China
[4] Ohio State Univ, Dept Mech & Aerosp Engn, Columbus, OH 43210 USA
基金
美国国家科学基金会;
关键词
quantum confinement; thermoelectric effect; topological Dirac semimetal; topological surface state; THERMAL-CONDUCTIVITY; DIRAC; TRANSPORT; OSCILLATIONS; PERFORMANCE; WEYL;
D O I
10.1002/adma.202311644
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. This work systematically examines thermoelectric transport in a series of topological Dirac semimetal Cd3As2 thin films grown by molecular beam epitaxy. Surprisingly, significantly enhanced Seebeck effect and anomalous Nernst effect are found at cryogenic temperatures when the Cd3As2 layer is thin. In particular, a peak Seebeck coefficient of nearly 500 mu V K-1 and a corresponding thermoelectric power factor over 30 mW K-2 m(-1) are observed at 5 K in a 25-nm-thick sample. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modeling, and first-principles simulation, the contributions from bulk and surface conducting channels are isolated and the unusual thermoelectric properties are attributed to the topological surface states. The analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures.
引用
收藏
页数:9
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