Insights into High-Dose Helium Implantation of Silicon

被引：0
作者：
Aleksandrov, P. A. [1 ]
Emelyanova, O. V. [2 ]
Shemardov, S. G. [1 ]
Khmelenin, D. N. [2 ]
Vasiliev, A. L. [1 ,2 ]
机构：
[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
[2] Kurchatov Inst, Shubnikov Inst Crystallog, Natl Res Ctr, Kurchatov Complex Crystallog & Photon, Moscow 119333, Russia
来源：
CRYSTALLOGRAPHY REPORTS | 2024年 / 69卷 / 03期
关键词：
SI; VOIDS; TEMPERATURE; CRYSTALS; CAVITIES; BUBBLES;
D O I：
10.1134/S1063774524600340
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The paper reports an analysis of surface morphology variation and cavity pattern formation in silicon single crystal induced by ion implantation and post-implantation annealing in different regimes. Critical implantation doses required to promote surface erosion are determined for samples subjected to post-implantation annealing and in absence of post-implantation treatment. For instance, implantation with helium ions to fluences below 3 x 10(17) He+/cm(2) without post-implantation annealing does not affect the surface morphology; while annealing of samples implanted with fluences of 2 x 10(17) He+/cm(2) and higher promotes flaking.
引用
收藏
页码：380 / 389
页数：10
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