Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics

被引:11
作者
Zhao, Yingtao [1 ]
Zhao, Sanchuan [1 ]
Pang, Xixi [1 ]
Zhang, Anni [1 ]
Li, Chenning [1 ]
Lin, Yuxuan [1 ]
Du, Xiaomeng [2 ]
Cui, Lei [1 ]
Yang, Zhenhua [1 ]
Hao, Tailang [1 ]
Wang, Chaopeng [1 ]
Yin, Jun [1 ]
Xie, Wei [2 ]
Zhu, Jian [1 ,3 ,4 ]
机构
[1] Nankai Univ, Natl Inst Adv Mat, Smart Sensing Interdisciplinary Sci Ctr, Sch Mat Sci & Engn, Tianjin 300350, Peoples R China
[2] Nankai Univ, Coll Chem, Tianjin 300071, Peoples R China
[3] Nankai Univ, Tianjin Key Lab Met & Mol Based Mat Chem, Tianjin 300350, Peoples R China
[4] Nankai Univ, Tianjin Key Lab Rare Earth Mat & Applicat, Tianjin 300350, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; CARBON NANOTUBE ARRAYS; THIN-FILM TRANSISTORS; LARGE-AREA; SEMICONDUCTOR NANOWIRES; PERFORMANCE; TRANSPARENT; CIRCUITS; INTEGRATION; FREQUENCY;
D O I
10.1126/sciadv.adm9322
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of similar to 10(4) are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.
引用
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页数:13
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