Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices

被引：0

作者：

Saini, Shalu ^{[1
]}

Dwivedi, Anurag ^{[1
]}

Lodhi, Anil ^{[1
]}

Khandelwal, Arpit ^{[1
]}

Tiwari, Shree Prakash ^{[1
]}

机构：

[1] Flexible Large Area Microelectronics (FLAME) Research Group, Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Rajasthan, Jodhpur

来源：

Memories - Materials, Devices, Circuits and Systems | 2023年 / 4卷

关键词：

Flexible electronics; Hybrid bilayer; Resistive random-access memory; Resistive switching;

D O I：

10.1016/j.memori.2023.100029

中图分类号：

学科分类号：

摘要：

Resistive switching (RS) behavior of bilayer of poly(4-vinylphenol) (PVP): molybdenum disulfide (MoS2) nanocomposite (NC) and TiO2 in resistive random-access memory (RRAM) devices were explored. Devices were demonstrated on indium tin oxide (ITO) coated glass and polyethylene naphtholate (PEN) substrates, with ITO acting as bottom electrode and Ag as top electrode for both rigid and flexible RRAM devices. The rigid devices exhibited excellent RS with very low SET and RESET voltages of ∼1 V and ∼−1.2 V, whereas the flexible devices showed average SET and RESET voltages of 1.5 V and −0.7 V. A decent repeatability was demonstrated with high on/off current ratios of more than 103 at reading voltage of 0.2 V for both types of devices. The flexible devices exhibited decent switching behavior even after bending up to a radius of 7 mm, indicating that PVP:MoS2 NC bilayer can be a promising candidate for the demonstration of high-performance RRAM devices for flexible electronics. © 2023 The Author(s)

引用

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