Resistance Switching and Carrier Transport Mechanisms of HfO2-Based Ferroelectric Diode

被引：1

作者：

Ma, Minglei ^{[1
,2
]}

Lin, Gaobo ^{[3
]}

Shen, Rongzong ^{[3
]}

Xu, Jiacheng ^{[3
]}

Qian, Haoji ^{[1
,2
]}

Gu, Jiani ^{[3
]}

Liu, Huan ^{[1
,2
]}

Zhang, Hongrui

Yu, Xiao ^{[1
,2
]}

Liu, Yan ^{[1
,2
]}

Chen, Jiajia ^{[1
,2
]}

Jin, Chengji ^{[1
,2
]}

Han, Genquan ^{[1
,2
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710126, Peoples R China

[2] Xidian Univ, Hangzhou Inst Technol, Hangzhou 311200, Peoples R China

[3] Zhejiang Lab, Hangzhou 311121, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 06期

关键词：

Switches; Resistance; Current measurement; Electrical resistance measurement; Fitting; Hafnium oxide; Electrons; Carrier transport mechanisms; ferroelectric diode (FD); switching mechanisms; MEMORY;

D O I：

10.1109/TED.2024.3390097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally studied resistance switching and carrier transport mechanisms of HfO2-basedferroelectric diode (FD) by systematic measurement as well as current fitting with possible carrier transport mod-els. FD with TiN/HZO/Al2O3/IGZO structure is fabricated with a low thermal budget of 400 degrees C and exhibits robust memory and self-rectifying characteristics. Fitting results show that current in high-resistance state (HRS) follows thermionic emission (TE), while low-resistance state (LRS)is dominated by Poole-Frenkel (PF) emission. The switch-ing between HRS and LRS is attributed to ferroelectric polarization switching combined with sufficient electron trapping. This work provides fundamental understanding of device physics of HfO2-based FD for high-density and low-power memory applications.

引用

页码：3959 / 3963

页数：5

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