Employing the empirical mode decomposition to denoise the random telegraph noise

被引:0
作者
Moshrefi A. [1 ]
Aghababa H. [1 ]
Shoaei O. [1 ]
机构
[1] School of Electrical and Computer Engineering, University of Tehran, Tehran
来源
International Journal of Engineering, Transactions A: Basics | 2021年 / 34卷 / 01期
关键词
Electronic Devices; Empirical Mode Decompositio; Noise; Random Telegraph Noise;
D O I
10.5829/IJE.2021.34.01A.11
中图分类号
学科分类号
摘要
Random Telegraph Noise (RTN) is a stochastic phenomenon which leads to characteristic variations in electronic devices. Finding features of this signal may result in its modeling and eventually removing the noise in the device. Measuring this signal is accompanied by some noise and therefore we require a method to improve the Signal to Noise Ratio (SNR). As a result, the extraction of an accurate RTN is a remarkable challenge. Empirical Mode Decomposition (EMD) as a fully adaptive and signal dependent method, with no dependency to the specific function, can be an appropriate solution. In this paper, we evaluate the most recent methods and compare them with our proposed approach for the artificial and actual RTN signals. The results show the higher accuracy and efficiency by about 54%, 61% and 39% improvement in SNR, Mean Square Error (MSE) and Percent Root mean square Difference (PRD) respectively for the optimized wited method. Finally, an indicator to evaluate the reliability in digital circuits is introduced. © 2021 Materials and Energy Research Center. All rights reserved.
引用
收藏
页码:90 / 96
页数:6
相关论文
共 44 条
  • [1] Connelly J. A., Low-Noise Electronic System Design, (1993)
  • [2] Li Z., Sui N., Wang G., Experimental study on vibration and noise of pure electric vehicle (PEV) drive system, International Conference on Electric Information and Control Engineering, ICEICE 2011 - Proceedings, pp. 5914-5917, (2011)
  • [3] Roshanian J., Khaksari H., Khoshnood A. M., Hasani S. M., Active Noise Cancellation using Online Wavelet Based Control System: Numerical and Experimental Study, International Journal of Engineering, Transactions A: Basics, 30, 1, pp. 120-126, (2017)
  • [4] Grasser T., Rott K., Reisinger H., Waltl M., Franco J., Kaczer B., A unified perspective of RTN and BTI, IEEE International Reliability Physics Symposium Proceedings, (2014)
  • [5] Valinataj M., Reliability and Performance Evaluation of Fault-aware Routing Methods for Network-on-Chip Architectures, International Journal of Engineering, Transactions A: Basics, 27, 4, pp. 509-516, (2014)
  • [6] Karatsori T. A., Pastorek M., Theodorou C. G., Fadjie A., Wichmann N., Desplanque L., Wallart X., Bollaert S., Dimitriadis C. A., Ghibaudo G., Static and low frequency noise characterization of ultra-thin body InAs MOSFETs, Solid-State Electronics, 143, pp. 56-61, (2018)
  • [7] Stampfer B., Zhang F., Illarionov Y. Y., Knobloch T., Wu P., Waltl M., Grill A., Appenzeller J., Grasser T., Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors, ACS Nano, 12, 6, pp. 5368-5375, (2018)
  • [8] Waltl M., Wagner P. J., Reisinger H., Rott K., Grasser T., Advanced data analysis algorithms for the time-dependent defect spectroscopy of NBTI, IEEE International Integrated Reliability Workshop Final Report, 74-79, pp. 74-79, (2012)
  • [9] Jech M., Ullmann B., Rzepa G., Tyaginov S., Grill A., Waltl M., Jabs D., Jungemann C., Grasser T., Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics - Part II: Theory, IEEE Transactions on Electron Devices, 66, 1, pp. 241-248, (2019)
  • [10] Lai Y., Li H., Kim D. K., Diroll B. T., Murray C. B., Kagan C. R., Low-frequency (1/ f) noise in nanocrystal field-effect transistors, ACS Nano, 8, 9, pp. 9664-9672, (2014)