Modulation Linearity Characterization of Si Mach-Zehnder Modulators

被引：0

作者：

Seong, Min-Hyeok ^{[1
]}

Ji, Yongjin ^{[1
]}

Im, Chul-Soon ^{[2
]}

Bae, Youngseok ^{[3
]}

Choi, Woo-Young ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, High Speed Circuits & Syst Lab, Seoul 03722, South Korea

[2] Hanwha Syst Co Ltd, Yongin R&D Ctr, Yongin 17122, South Korea

[3] Agcy Def Dev, Daejeon 34186, South Korea

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2024年 / 42卷 / 06期

关键词：

Intermodulation distortion; Microwave photonics; Modulation linearity; Si Mach-Zehnder modulators; Spurious free dynamic range; DISTORTION; PERFORMANCE;

D O I：

10.1109/JLT.2023.3327146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Linearity of Si Mach-Zehnder Modulators (MZM) is characterized with a newly-proposed modeling technique which includes the influences of the transmission characteristics of traveling-wave (TW) electrodes and the electro-optic (EO) characteristics of PN junction phase shifters within Si MZMs. Using the technique, the third-order intermodulation distortion (IMD3) and the spurious-free dynamic range (SFDR) of a sample Si MZM device are determined, and their accuracy is verified with measurement results. In addition, the contributions of different nonlinear parameters to the nonlinearity of the sample Si MZM are identified.

引用

页码：1901 / 1909

页数：9

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