Oxygen-termination effect on the surface energy dissipation in diamond MEMS

被引:4
作者
Gu, Keyun [1 ,2 ]
Zhang, Zilong [2 ]
Chen, Guo [2 ]
Huang, Jian [1 ]
Koide, Yasuo [2 ]
Koizumi, Satoshi [2 ]
Zhao, Wen [2 ]
Liao, Meiyong [2 ]
机构
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
[2] Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan
关键词
Single-crystal diamond; MEMS; Oxygen surface termination; Quality factor; QUALITY FACTORS; RESONATOR; FILM;
D O I
10.1016/j.carbon.2024.119159
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single-crystal diamond (SCD) microelectromechanical systems (MEMS) resonators with lower energy dissipation and higher quality (Q) factors have always been pursued for the development of high -sensitivity and high signalto-noise ratio (SNR) MEMS sensors. The intrinsic loss such as the crystal quality and extrinsic loss of clamping loss have been examined to improve the Q factors of SCD MEMS resonators. Nevertheless, the surface termination induced energy dissipation has rarely been known due to the lack of high crystal quality diamond resonators and in-situ characterization. Here we examine the effect of oxygen-termination on the surface energy dissipation of SCD cantilevers by in-situ heating these cantilevers in a high vacuum chamber. After thermal treatment of the cantilevers at 933 K, the Q factor of the cantilever is improved from 2.8x10 5 to 3.3x10 5 (i.e. the 120 mu m-long). The resonance frequency increase confirms the desorption of surface adsorbates. Compared to silicon, on which a native solid -state oxide exists, the surface oxygen-termination induced loss in diamond MEMS is much smaller. The non-existence of native oxides on diamond surface is an obvious merit toward ultra -high Q factor MEMS resonators.
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页数:8
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