A Molecular Dynamics Study of Tungsten's Interstitial Dislocation Loops Formation Induced by Irradiation under Local Strain

A molecular dynamics simulation was used to investigate the effect of applied strain on the formation of primary defects and the probability of interstitial dislocation loops (IDLs) formation of tungsten (W) during a collision cascade event. The research investigated primary knock-on atom energies of 1, 6, 10, and 14 keV, applied on a deformed W structure (form -1.4 similar to 1.6%). The peak and surviving number of Frenkel pairs (FPs) increased with increasing tension; however, these increases were more pronounced under higher strain due to the formation of IDLs. For 10 self-interstitial atoms (SIA) lengths, the strain effect reduces the clustering energy of the IDLs by about 7 eV. In general, the current findings suggest that strain effects should be carefully considered in radiation-damaged environments, particularly in low-temperature, high-radiation-energy environments. The compressed condition may advantage materials used in high-radiation-damage devices and power systems.