Design of quasi-zero-stiffness elastic diodes for low-frequency nonreciprocity through machine learning
被引:4
作者:
He, Junsen
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机构:
Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R ChinaHunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
He, Junsen
[1
]
Zhou, Jiaxi
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机构:
Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
Hunan Univ, Key Lab Adv Design & Mfg Technol Vehicle, Changsha 410082, Peoples R ChinaHunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
Zhou, Jiaxi
[1
,2
]
Wang, Kai
论文数: 0引用数: 0
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机构:
Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Peoples R ChinaHunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
Wang, Kai
[1
,3
]
Wang, Qiang
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机构:
Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R ChinaHunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
Wang, Qiang
[1
]
机构:
[1] Hunan Univ, Coll Mech & Vehicle Engn, Changsha 410082, Peoples R China
[2] Hunan Univ, Key Lab Adv Design & Mfg Technol Vehicle, Changsha 410082, Peoples R China
[3] Hong Kong Polytech Univ, Dept Mech Engn, Hong Kong, Peoples R China
Elastic diodes with nonreciprocity have the potential to enable unidirectional modulation of elastic waves. However, it is a challenge to achieve nonreciprocity at low frequencies (<100 Hz) using existing elastic diodes. This paper proposes a quasi-zero-stiffness (QZS) elastic diode to resolve such a tough issue and fulfill high-quality low-frequency nonreciprocity. The proposed elastic diode is invented by combining a QZS locally resonant metamaterial with a linear one, where the beneficial nonlinearity of the QZS metamaterial facilitates opening an amplitude-dependent band gap at very low frequencies. Firstly, the dispersion relation of the QZS metamaterial is derived theoretically based on the harmonic balance method (HBM). Then, the transmissibility of the QZS elastic diode in both the forward and backward directions is calculated through theoretical analyses and numerical simulations. Additionally, the influences of system parameters on the low-frequency nonreciprocal effect are discussed. The results indicate that considerable nonreciprocity is observed at a quite low frequency (e.g., 9 Hz), which is achieved by amplitude-dependent local resonance combined with interface reflection. Finally, a machine learning-based design optimization is introduced to evaluate and enhance the nonreciprocal effect of the QZS elastic diode. With the aid of machine learning (ML), the computational cost of predicting nonreciprocal effects during design optimization can be significantly reduced. Through design optimization, the nonreciprocal frequency bandwidth can be broadened while maintaining considerable isolation quality at low frequencies.
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Fan, Li
;
Wang, Jian
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机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Wang, Jian
;
Varghese, Leo T.
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机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Varghese, Leo T.
;
Shen, Hao
论文数: 0引用数: 0
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机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Shen, Hao
;
Niu, Ben
论文数: 0引用数: 0
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机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Niu, Ben
;
Xuan, Yi
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机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Xuan, Yi
;
Weiner, Andrew M.
论文数: 0引用数: 0
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机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Weiner, Andrew M.
;
Qi, Minghao
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R ChinaPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Fan, Li
;
Wang, Jian
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Wang, Jian
;
Varghese, Leo T.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Varghese, Leo T.
;
Shen, Hao
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Shen, Hao
;
Niu, Ben
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Niu, Ben
;
Xuan, Yi
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Xuan, Yi
;
Weiner, Andrew M.
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Weiner, Andrew M.
;
Qi, Minghao
论文数: 0引用数: 0
h-index: 0
机构:
Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R ChinaPurdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA