Preparation of nearly-stoichiometric TiN powder by chemical vapor deposition in fluidized-bed

被引:0
|
作者
Sang Y. [1 ,2 ]
Xiang M. [1 ]
Song M. [1 ,2 ]
Zhu Q. [1 ,2 ]
机构
[1] Institute of Process Engineering, Chinese Academy of Sciences, Beijing
[2] School of Chemical Engineering, University of Chinese Academy of Sciences, Beijing
来源
Huagong Xuebao/CIESC Journal | 2020年 / 71卷 / 06期
关键词
Fluidized-bed chemical vapor deposition; Powder; Stoichiometric; Titanium nitride;
D O I
10.11949/0438-1157.20200077
中图分类号
学科分类号
摘要
The traditional gas-solid reaction process for preparing TiN powder has an insurmountable internal diffusion control process, which has caused great difficulties in preparing high-purity, positive stoichiometric ratio TiN powder. Herein, to address the issue, a fluidized bed chemical vapor deposition (FBCVD) process was developed to fabricate high quality TiN powders based on TiCl4-N2-H2 system. The results showed that when the average particle size of TiN seeds was larger than 52.95 μm, they can realize long-term stable fluidization at 1000℃ even for 2 h and the obtained powders was nearly stoichiometric ratio TiN0.96. In addition, the oxygen content of obtained TiN powders decreased about 40% compared with raw TiN seeds. Moreover, the growth of TiN was controlled by the Volmer-Weber growth mode, which provides a new horizon for preparing high quality TiN powder in industry. © All Right Reserved.
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页码:2743 / 2751
页数:8
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