Enhancing π-SnS thin films and fabrication of p-SnS/n-Si heterostructures through flow rate control in ultrasonic spray pyrolysis for improved photovoltaic performance

This study presents findings related to the characterization of cubic SnS (pi-SnS) thin films and p-SnS/n-Si heterojunction structures produced simultaneously using the ultrasonic spray pyrolysis technique. In this context, the impact of different spray solution flow rates on the morphological, structural, optical, and electrical characteristics of the films was examined. Morphological analyses revealed that higher flow rates resulted in films with denser and smoother surfaces, approximately 6 nm in roughness. Additionally, it was observed that both the thickness and the growth rate of the films could be adjusted through the modulation of the flow rate. Structural analyses determined that the crystallite size increased and micro-strain values decreased with increasing flow rates. Optical evaluations indicated a decline in the optical band gap of the thin films from about 1.8 eV to 1.7 eV as the flow rates increased. This trend was consistently observed in the data obtained using the Tauc method and the derivative of transmission with respect to wavelength versus photon energy graphs. Electrical analyses revealed that the resistivity values of the thin films increased from 5.24 x 105 ohm cm to 1.64 x 106 ohm cm with increasing flow rates. Furthermore, I-V analyses of the Au/p-SnS/n-Si/Ag heterojunction structures indicated significant variability in key electrical properties. The saturation currents displayed a broad range, suggesting varying efficiencies in charge carrier collection across different samples. Similarly, the change of ideality factors pointed to differences in charge transport mechanisms, while the shifts in barrier heights indicated changes in junction properties with different fabrication conditions. The results of this study offer valuable perspectives for future research.