Achieving high open-circuit voltage in efficient kesterite solar cells via lanthanide europium ion induced carrier lifetime enhancement

Short carrier lifetimes is a key challenge limiting the open -circuit voltage ( V OC ) and power conversion efficiency (PCE) of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells. In this work, for the first time, lanthanide europium (Eu) ions have been introduced into Ag-incorporated CZTSSe absorber layer, which can modify the selenization reaction pathway during the initial selenization process, leading to high -quality (Ag, Eu)-CZTSSe absorber with large compact crystal grains and benign surface potential fluctuations. This innovative absorber engineering can also optimize defects dynamics with less detrimental defects and defects -assisted non -radiative recombination. Thus, significantly enhanced minority carrier lifetimes from 0.97 to 3.15 ns can be achieved, representing one of the top values among various bulk and/or interface engineering treated CZTSSe. The champion CZTSSe thin-film solar cell exhibits an impressive V OC of 545.6 mV, accompanied with a stimulating increase in PCE from 10.68% to 13.30%. These findings underscore the potential of lanthanide cation doping to drive significant advancements in CZTSSe photovoltaic technology, and therefore promoting its further development and future applications.