Synthesis, characterization, crystal structure, and fabrication of photosensitive Schottky device of a binuclear Cu(ii)-Salen complex: a DFT investigations

This work explores one centrosymmetric binuclear Cu(II)-Salen complex synthesis, characterization, photosensitive Schottky barrier diode (PSBD) function, and DFT spectrum. The crystal growth involves H2LSAL and Cu(NO3)(2)<middle dot>3H(2)O in CH3OH + ACN (acetonitrile) solvent medium. Herein, structural characterization employs elemental, IR/Raman, NMR, UV-VIS, DRS, SEM-EDX, PXRD, SCXRD, and XPS analyses. The complex crystal size is 0.2 x 0.2 x 0.2, showing monoclinic space group C2/c. The dimeric unit contains two Cu(II) centres with distorted square pyramidal (SQP) geometries. The crystal packing consists of weak C-H & ctdot;O interactions. DFT and Hirshfeld surface (HS) further substantiated the packing interactions, providing valuable insights into the underlying mechanisms. The 2-D fingerprint plots showed the presence of N & ctdot;H (3%) and O & ctdot;H (8.2%) contacts in the molecular arrangement. NBO, QTAIM, ELF-LOL, and energy frameworks are utilized to investigate the bonding features of the complex. We extensively studied electrical conductivity and PSBD for H2LSAL and the complex based on band gap (3.09 and 3.07 eV). Like an SBD, the complex has better electrical conductivity, evidencing potentiality in optoelectronic device applications. Optical response enhances conductivity, according to I-V characteristics. Complex Schottky diode has lower barrier height, resistance, and higher conductivity under light. The complex transports charge carriers through space and is rationalized by the 'hopping process' and 'structure-activity-relationship' (SAR). The charge transport mechanism was analysed by estimating complex mobility (mu(eff)), lifetime (tau), and diffusion length (L-D). The experimental and theoretical DOS/PDOS plots provide evidence for the Schottky diode function of the complex.