Research on Single-Event Radiation Characteristics of an 8-Gbps SerDes in a 28nm CMOS Technology

被引：0
|
作者：
Wen Y. [1 ]
Chen J.-J. [1 ]
Liang B. [1 ]
Chi Y.-Q. [1 ]
Huang J. [1 ]
机构：
[1] College of Computer Science, National University of Defense Technology, Hunan, Changsha
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2022年 / 50卷 / 11期
关键词：
double exponential current source simulation; pulse-laser experiments; sensitive node; serializer/deserializer interface; single-event effect;
D O I：
10.12263/DZXB.20211691
中图分类号：
学科分类号：
摘要：
In this paper, single-event radiation characteristics of an 8-Gbps high-speed Serializer/Deserializer interface (SerDes) is studied in a 28 nm bulk CMOS technology. The SerDes, which is composed of a voltage mode transmitter (TX) and a phase interpolating (PI) receiver (RX), is simulated by a double exponential current source to find the sensitive node, and the simulation results show both the TX and RX appear single-event transient (SET) and the main sensitive nodes of the whole SerDes include D flip-flop, samplers and clock phase interpolators. These sensitive nodes are further verified through pulsed-laser single-event experiment, and the study provides an important theoretical basis for the design of radiation-hardened SerDes. © 2022 Chinese Institute of Electronics. All rights reserved.
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页码：2653 / 2658
页数：5
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