GaAs/AlGaAs- and InGaAs/AlGaAs-Heterostructures for High-Power Semiconductor Infrared Emitters

被引：0
|
作者：
Gulyaev, D. V. [1 ]
Dmitriev, D. V. [1 ]
Fateev, N. V. [1 ]
Protasov, D. Yu. [1 ,2 ]
Kozhukhov, A. S. [1 ]
Zhuravlev, K. S. [1 ]
机构：
[1] Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Russian Acad Sci, Siberian Branch, Novosibirsk 630073, Russia
来源：
TECHNICAL PHYSICS | 2024年 / 69卷 / 02期
关键词：
GaAs/AlGaAs and InGaAs/AlGaAs heterostructures; internal quantum exit; photoluminescence; molecular-beam epitaxy; LIGHT-EMITTING-DIODES; QUANTUM EFFICIENCY; BRAGG-REFLECTOR;
D O I：
10.1134/S106378422401016X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated. It has been shown that it is possible to increase the quantum luminescence efficiency of the studied heterostructures up to 75-80% at the average power by the combined optimization of these processes.
引用
收藏
页码：249 / 254
页数：6
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