Determination of electron concentration by IR reflection spectra in n-GaAs samples doped with tellurium and silicon

被引：0

作者：

Komarovskyi N.Yu. ^{[1
,2
]}

Belov A.G. ^{[1
]}

Kladova E.I. ^{[1
]}

Knyazev S.N. ^{[1
]}

Molodtsova E.V. ^{[1
]}

Parfenteva I.B. ^{[1
]}

Trofimov A.A. ^{[3
]}

机构：

[1] Giredmet, JSC Bd., 1, 2 Elektrodnaya st., Moscow

[2] National University of Science and Technology MISiS Bd., 1, 4 Leninsky Ave., Moscow

[3] Orion R&P Association, JSC, 9 Kosinskaya st., Moscow

来源：

Applied Physics | 2023年 / 06期

关键词：

conductivity electron concentration; gallium arsenide; infrared reflectivity spectra; Van der Pau method;

D O I：

10.51368/1996-0948-2023-6-54-59

中图分类号：

学科分类号：

摘要：

Infrared reflectivity and Hall measurements of free electron concentration have been carried out on n-GaAs samples, doped with tellurium and silicon (~1018 cm-3). For every sample the value of characteristic wave number has been determined and the value of electron concentration Nopt has been calculated. Van der Pau measurements have been carried out on these very samples also and electron concentration values NHall have been obtained. All measurements have been carried out at room temperature. The correlation between NHall and Nopt values has been established. Tellurium and silicon as doping impurities were shown to be analogical. It was shown also that for all measured samples Hall concentration values exceed optical ones. The suggestion has been made that it may be connected with the presence of natural oxide layer on sample surfaces. Skin-layer thickness has been calculated for n-GaAs sample with free electron concentration 1.0×1018 cm-3 and it was shown to be equal to 0.69 micrometers. © 2023 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.

引用

页码：54 / 59

页数：5

共 8 条

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