Ba0.95Sr0.05Ca5Ti2Nb8O30 sample was prepared by solid-state reaction technique to investigate structural, optical, magnetic and dielectric properties via performing different characterizations. XRD reveals the orthorhombic structure with Pbcn space group along with Rietveld refinement. Grain size of the bulk sample was carried out by SEM, which is 1.25 mu m. Then, microstructural correlated with optical by means of Raman, FTIR and PL spectroscopies. Raman studies reveal the presence of different modes along with band assignments. FTIR and PL studies reveal the bonding modes of A- and B-site atoms, which give the energy band gap around 2.969, 2.441 and 2.012 eV for different bond contributions. The magnetic property was carried out by VSM. The dielectric properties, as a function of frequency and temperature, were carried out and reveal that the bulk sample can be used as storage devices. The modulus spectroscopy was calculated from dielectric studies to analyse electrical properties.
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Andhra Univ, Solid State Phys & Mat Res Lab, Dept Phys, Visakhapatnam, Andhra Pradesh, IndiaUniv Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, Chile
Chandramouli, K.
Viswarupachary, P.
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Andhra Univ, Solid State Phys & Mat Res Lab, Dept Phys, Visakhapatnam, Andhra Pradesh, IndiaUniv Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, Chile
Viswarupachary, P.
Ramam, Koduri
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Univ Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, ChileUniv Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, Chile
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Fang, L
Zhang, H
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Zhang, H
Yang, JF
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Yang, JF
Meng, FC
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Meng, FC
Yuan, RZ
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
机构:
Andhra Univ, Solid State Phys & Mat Res Lab, Dept Phys, Visakhapatnam, Andhra Pradesh, IndiaUniv Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, Chile
Chandramouli, K.
Viswarupachary, P.
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Andhra Univ, Solid State Phys & Mat Res Lab, Dept Phys, Visakhapatnam, Andhra Pradesh, IndiaUniv Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, Chile
Viswarupachary, P.
Ramam, Koduri
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Univ Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, ChileUniv Concepcion, Fac Ingn, Dept Ingn Mat DIMAT, Concepcion, Chile
机构:
Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Fang, L
Zhang, H
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Zhang, H
Yang, JF
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Yang, JF
Meng, FC
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
Meng, FC
Yuan, RZ
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Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R ChinaWuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China