An Improved Active Miller Clamp Crosstalk Suppression Method for Enhancement-Mode GaN HEMTs in Phase-Leg Configuration; [基于增强型GaN HEMT的改进型桥臂串扰抑制方法研究]

被引：0

作者：

Qin H. ^{[1
]}

Wang W. ^{[1
]}

Bu F. ^{[1
]}

Peng Z. ^{[1
]}

Liu A. ^{[2
]}

Bai S. ^{[2
]}

机构：

[1] College of Automation Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing

[2] State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Devices Institute, Nanjing

来源：

Transactions of Nanjing University of Aeronautics and Astronautics | 2021年 / 38卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Active clamp; Crosstalk suppression; Enhancement-mode GaN (eGaN); Gate driver; High-speed switching;

D O I：

10.16356/j.1005-1120.2021.05.005

中图分类号：

学科分类号：

摘要：

When using traditional drive circuits, the enhancement-mode GaN (eGaN) HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems. Currently, the existing crosstalk suppression drive circuits often have the disadvantages of increased switching loss, control complexity, and overall electromagnetic interference (EMI). Therefore, this paper combines the driving loop impedance control and the active Miller clamp method to propose an improved active Miller clamp drive circuit. First, the crosstalk mechanism is analyzed, and the crosstalk voltage model is established. Through the crosstalk voltage evaluation platform, the influencing factors are evaluated experimentally. Then, the operating principle of the improved active Miller clamp drive circuit is discussed, and the optimized parameter design method is given. Finally, the effect of the improved active Miller clamp method for suppressing crosstalk is experimentally verified. The crosstalk voltage was suppressed from 3.5 V and -3.5 V to 1 V and -1.3 V, respectively, by the improved circuit. © 2021, Editorial Department of Transactions of NUAA. All right reserved.

引用

页码：758 / 768

页数：10