Self-Consistent Extraction of Mobility and Series Resistance: A Hierarchy of Models for Benchmarking Organic Thin-Film Transistors

被引：2
作者：
Blawid, Stefan [1 ]
Dallaire, Nicholas J. [2 ]
Lessard, Benoît H. [2 ]
机构：
[1] Centro de Informática, Universidade Federal de Pernambuco,, Recife
[2] Department of Chemical and Biological Engineering, University of Ottawa, Ottawa, K1N 6N5,, ON
来源：
IEEE Journal on Flexible Electronics | 2022年 / 1卷 / 02期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Charge carrier mobility; contact resistance; emission–diffusion (ED) theory; semiconductor device model; thin-film transistors (TFTs); virtual source (VS);
D O I：
10.1109/JFLEX.2022.3165140
中图分类号：
学科分类号：
摘要：
Organic thin-film transistors (OTFTs) are usually benchmarked across different devices and technologies based on the threshold voltage, charge carrier mobility, and series resistance. However, conventional parameter extraction established for silicon transistors frequently lead to misleading results when applied to OTFTs. Some of the peculiarities of OTFTs can be addressed by the virtual-source (VS) emission–diffusion (ED) theory. Using published data and own measurements, we show that the electrical characteristics of OTFTs partially limited by mobile charge supply to the channel, thermic emission, or by velocity saturation can be successfully predicted by an organic VSED model. Simplifying the current-voltage dependence obtained from the VSED theory modified for organic materials (OVSED), we introduce a hierarchy of benchmark models only employing one additional parameter with a specific electrical signature for each of these limitations. As a special case, the hierarchy includes the widely applied Shichman–Hodges (SH) model. In combination with standard nonlinear least-squares solvers, such benchmark models can replace conventional extraction methods and are applicable to a wider range of OTFT technologies. © 2022 IEEE.
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页码：114 / 121
页数：7
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