Pressure-Induced Enhancement and Retainability of Optoelectronic Properties in Layered Zirconium Disulfide

Transition metal dichalcogenides (TMDs) exhibit excellent electronic and photoelectric properties under pressure, prompting researchers to investigate their structural phase transitions, electrical transport, and photoelectric response upon compression. Herein, the structural and photoelectric properties of layered ZrS2 under pressure using in situ high-pressure photocurrent, Raman scattering spectroscopy, alternating current impedance spectroscopy, absorption spectroscopy, and theoretical calculations are studied. The experimental results show that the photocurrent of ZrS2 continuously increases with increasing pressure. At 24.6 GPa, the photocurrent of high-pressure phase P21/m is three orders of magnitude greater than that of the initial phase P3<overline>m1$P\bar{3}m1$ at ambient pressure. The minimum synthesis pressure for pure high-pressure phase P21/m of ZrS2 is 18.8 GPa, which exhibits a photocurrent that is two orders of magnitude higher than that of the initial phase P3<overline>m1$P\bar{3}m1$ and displays excellent stability. Additionally, it is discovered that the crystal structure, electrical transport properties and bandgap of layered ZrS2 can also be regulated by pressure. This work offers researchers a new direction for synthesizing high-performance TMDs photoelectric materials using high pressure, which is crucial for enhancing the performance of photoelectric devices in the future. This paper reports a method for synthesizing a novel zirconium disulfide with a strong photoelectric response through the application of pressure. Moreover, both the photoelectric response and bandgap of the initial ZrS2 sample can be regulated by compression. The research provides a potential way to modify the optoelectronic properties of transition metal dichalcogenides materials. image