Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

被引：0
作者：
Giacomini, Gabriele [1 ]
机构：
[1] Giacomini, Gabriele
来源：
Giacomini, Gabriele (giacomini@bnl.gov) | 1600年 / Frontiers Media SA卷 / 09期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
[41]   SILICON DIFFUSED JUNCTION AVALANCHE DIODES [J].
VELORIC, HS ;
SMITH, KD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) :222-226
[42]   HOMOGENEOUS AVALANCHE BREAKDOWN IN SILICON DIODES [J].
ZUBRILOV, AS ;
KOTIN, OA ;
SHUMAN, VB .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04) :380-382
[43]   COMPUTER CALCULATION OF SILICON AVALANCHE DIODES [J].
MATSUMURA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (07) :514-+
[44]   INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].
NISHIDA, K ;
TAGUCHI, K ;
MATSUMOTO, Y .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :251-253
[45]   A simulation model of front-end electronics for high-precision timing measurements with low-gain avalanche detectors [J].
Pena, C. ;
Deptuch, G. ;
Xie, S. ;
Apresyan, A. ;
Narvaez, L. ;
Ristori, L. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 940 :119-124
[46]   FABRICATION ADVANCES BOOST POTENTIAL OF AVALANCHE DIODES [J].
STOVER, HL .
ELECTRONICS, 1968, 41 (14) :96-&
[47]   Design and fabrication of Low Gain Avalanche Detectors (LGAD): a TCAD simulation study [J].
Wu, K. ;
Zhao, M. ;
Yang, T. ;
da Costa, Joao Guimaraes ;
Liang, Z. ;
Shi, X. .
JOURNAL OF INSTRUMENTATION, 2020, 15 (03)
[48]   The CMS MTD Endcap Timing Layer: Precision timing with Low Gain Avalanche Diodes [J].
Ferrero, M. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2022, 1032
[49]   VERY LOW-NOISE SILICON PLANAR AVALANCHE PHOTO-DIODES [J].
GOEDBLOED, JJ ;
SMEETS, ETJM .
ELECTRONICS LETTERS, 1978, 14 (03) :67-69
[50]   TRANSVERSE INHOMOGENEITY AND DETERMINATION OF GAIN IN LOW-GAIN GAS-LASERS [J].
PYATAKHIN, MV ;
YANOSSY, M ;
CSILLAG, L ;
ORAEVSKSY, AN ;
SUCHKOV, AF .
KVANTOVAYA ELEKTRONIKA, 1991, 18 (04) :414-417
12345