Influence of emitter doping process on performance of industrial IBC solar cell

被引：0
|
作者：
Zhang Z. [1 ]
Zou P. [1 ]
Liu Z. [2 ]
Zhao Y. [2 ]
Bao J. [2 ]
机构：
[1] SPIC Qinghai Photovoltaic Industry Innovation Center Co., Ltd., Xining
[2] Jolywood (Taizhou) Solar Technology Co., Ltd., Taizhou
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2022年 / 43卷 / 03期
关键词：
Conversion efficiency; IBC; Industrialization; Numerical simulation; Solar cells; Thermal diffusion;
D O I：
10.19912/j.0254-0096.tynxb.2020-0669
中图分类号：
学科分类号：
摘要：
In this paper, the emitter boron doping process is optimized for n-type IBC silicon wafer solar cell, and the experimental results are verified and analyzed by ENDA2 simulation software. The influence of different emitter boron diffusion processes on the performance of industrial IBC solar cell is investigated by the recombination loss analysis. The results show that the sheet resistance of 98 [Ω/sq] can be realized with higher drive-in temperature during boron diffusion process, which exhibits the lowest surface concentration of 1.68×1019 cm-3 and the deepest p-n junction depth of 0.88 μm, and results in the lowest recombination loss ([J0, pass=24] fA/cm2) of the solar cells. Under 25 ℃, the AM 1.5 standard test conditions, the maximum efficiency of 23.4%([Jsc=41.99] mA/cm2, [Voc=688.4 mV, ] [FF=80.9%]) is achieved for IBC solar cell with optimized boron diffusion process. Further, the power loss of each component of the champion cell is analyzed by numerical simulation, paving a new way for efficiency optimization in terms of the industrial IBC solar cell. © 2022, Solar Energy Periodical Office Co., Ltd. All right reserved.
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页码：158 / 162
页数：4
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