Enhancing the performance of thermoelectric generators using novel segmental arrangement of multi-functional gradient materials

被引:2
作者
Harb, Abd El-Moneim A. [1 ]
Elsayed, Khairy [1 ]
Sedrak, Momtaz [1 ]
Ahmed, Mahmoud [2 ]
Abdo, Ahmed [3 ]
机构
[1] Helwan Univ, Fac Engn Mataria, Mech Power Dept, Cairo, Egypt
[2] Assiut Univ, Mech Engn Dept, Assiut 71516, Egypt
[3] Tanta Univ, Dept Mech Engn, Tanta, Egypt
关键词
Thermoelectric generators; Updated semiconductor materials; Multi -functional gradient; Conversion efficiency; WASTE HEAT-RECOVERY; POWER-GENERATION; OPTIMIZATION; DESIGN;
D O I
10.1016/j.renene.2024.120311
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Enhancing the performance of thermoelectric generators at wide range of operating temperatures is of great importance to maximize the output power. Thus, different updated semiconductor materials with different values of figure of merit are used. Accordingly, a modified design of the TEG system based on the multi -functional gradient (MFG) technique is developed. A comprehensive three-dimensional modeling and optimization analysis was developed and numerically simulated. The numerical predicted results were validated using the available measurements and numerical data. The results showed that when compared to low operating temperature semiconductor material of traditional (Bi 2 Te 3 ) at a hot side temperature equals 227 degrees C, the updated material improved the output power and efficiency by 18.8% and 58%, respectively. At high operating temperature at T h = 620 degrees C, the upgraded material outperformed the Silicon - germanium (SiGe T ) traditional semiconductor material by about 71% in the output power and 100% in the efficiency. Using the MFG-TEG, the performance improvement over the conventional design at T c = 27 degrees C, and T h of 477 degrees C was around 315% for output power and 503% for efficiency. The current findings introduce a brand-new, innovative technique that allows scientists to create thermoelectric generators that are incredibly efficient.
引用
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页数:18
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