GaN L-Band 400W Power Amplifier Design Using Large Signal Model

被引：0

作者：

Zhong S.-C. ^{[1
,2
]}

Chen T.-S. ^{[2
]}

Yin X.-X. ^{[1
]}

Zhou S.-T. ^{[2
]}

机构：

[1] Southeast University, Nanjing, 210096, Jiangsu

[2] Nanjing Electronic Devices Institute, Nanjing, 210016, Jiangsu

来源：

Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2020年 / 48卷 / 02期

关键词：

Amplifier; GaN; Internally matched; L-band; Model;

D O I：

10.3969/j.issn.0372-2112.2020.02.024

中图分类号：

学科分类号：

摘要：

This paper describes a L-band 400W gallium nitride (GaN) internally matched power amplifier using an accurate large signal Angelov model. The large gate-periphery GaN devices on SiC substrate are used for achieving the large output power and high efficiency. For designing exactly the power amplifier, the large signal GaN model is founded using measured pulse I-V and S parameters of different bias conditions. Based on the large signal model, the input and output matching circuits and one 55mm GaN transistor are integrated in a 17.4mm×24mm ceramic package. The amplifier finally has the pulse output power of over 400W, the power gain of over 15dB across the band of 1.2-1.4GHz and the max power added efficiency is 81.3% under the pulse drain bias voltage (Vds) of 48V, the duty is 10% with the pulse width of 100μs.The results show that the character of realized amplifier is consistent with the simulation result, which fully indicates the veracity of the developed model. And this is the most highest efficiency of a 400W power amplifier achieved in L-band. © 2020, Chinese Institute of Electronics. All right reserved.

引用

页码：398 / 402

页数：4

共 4 条

[1]

Mikulla M., Storm S., Henelius N., Et al., Manufacturable GaN SiC substrates and GaN epi wafer supply chain, European Microwave Integrated Circuit Conference, pp. 221-224, (2014)

[2]

Zhong S., Chen T., Ren C., Et al., AlGaN/GaN HEMT with over 110W output power for x-Band, European Microwave Integrated Circuit Conference, pp. 91-94, (2008)

[3]

Wang H., Mai K., Peng L., Et al., Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate, IEEE International Conference on Electron Devices and Solid-State Circuits, pp. 645-648, (2015)

[4]

Rochette S., Vendier O., Langrez D., Et al., A high efficiency 140W power amplifier based on a single GaN HEMT device for space applications in L-band, European Microwave Integrated Circuit Conference, pp. 127-130, (2012)

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