Bilinear magnetoresistance and planar Hall effect in topological insulators: Interplay of scattering on spin-orbital impurities and nonequilibrium spin polarization

被引:3
作者
Boboshko, K. [1 ]
Dyrdal, A. [1 ]
机构
[1] Adam Mickiewicz Univ, Fac Phys, Dept Mesoscop Phys, ISQI, Ul Uniw Poznanskiego 2, PL-61614 Poznan, Poland
关键词
ELECTRIC-CURRENT; ORIENTATION; CONVERSION;
D O I
10.1103/PhysRevB.109.155420
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have considered theoretically nonlinear transport phenomena known as bilinear magnetoresistance (BMR) and nonlinear planar Hall effect (NPHE) within the effective model describing surface states of a 3D topological insulator. Both phenomena can occur in nonmagnetic materials with strong spin -orbit interaction and reveal a term that depends linearly on the charge current density (external electric field) and in -plane magnetic field. In earlier studies, the physical mechanism of BMR and NPHE was related to scattering on spin -momentum locking inhomogeneities or to the hexagonal warping of Dirac cones. Here, we focus on another mechanism related to scattering on impurities that inherently contain spin -orbit coupling. Using the Green's function formalism and diagramatic method, we have derived analytical results for diagonal and transverse conductivities and determined nonlinear signals. The analytical and numerical results on BMR and NPHE indicate the possibility of determining the material constants, such as the Fermi wave vector and spin -orbit coupling parameter, by simple magnetotransport measurements.
引用
收藏
页数:11
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