Emission current enhancement from quasi-freestanding epitaxial graphene microstructure electron emitters through surface layered silicon dioxide

被引：0

作者：

Lewis, Daniel ^{[1
,2
]}

Swart, Jason ^{[3
]}

Pedowitz, Michael ^{[1
,2
]}

Demell, Jennifer ^{[4
]}

Jordan, Brendan ^{[1
,2
]}

Myers-Ward, Rachael L. ^{[5
]}

Pennachio, Daniel J. ^{[5
]}

Hajzus, Jenifer R. ^{[5
]}

Daniels, Kevin M. ^{[1
,2
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Inst Res Elect & Appl Phys, College Pk, MD 20742 USA

[3] Arizona State Univ, Sch Math & Stat Sci, Tempe, AZ 85281 USA

[4] Lab Phys Sci, College Pk, MD 20740 USA

[5] US Naval Res Lab, Washington, DC 23075 USA

来源：

2D MATERIALS | 2024年 / 11卷 / 03期

关键词：

quasi-freestanding; phonon assisted; electron emission; bilayer graphene; epitaxial graphene; microstructures; secondary electron emission;

D O I：

10.1088/2053-1583/ad3ce9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Enhanced electron emission from oxide-encapsulated quasi-freestanding bilayer epitaxial graphene devices is reported, including one emission current of 9.4 mu A and successful emission even with oxide thicknesses of up to 1.25 mu m. The low operating temperature (215 degrees C), and applied electric fields under which the devices operate indicate electron emission is due to phonon-assisted electron emission, wherein forward-scattering hot phonons impart the necessary energy for the electrons to escape the graphene as an emission current. A suite of device structures and behaviors are cataloged, and various emission behaviors are demonstrated through encapsulating oxide layers. Emission current enhancement due to electron multiplication in the oxide layers is observed across multiple devices and oxide thicknesses.

引用

页数：14

共 42 条

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