Circuitry and Technological Methods to Improve the Technical Characteristics of Power Thyristors. Part 1. Lockable Thyristors with External Control

Abstract: The methods for effective control over high-power thyristors using MOSFETs integrated into the structure of a power device have been considered. Features of the operation of power bipolar transistors and lockable thyristors in modes of high voltages and increased current densities are shown. The variants of hybrid combined circuits based on turn-off thyristors with integrated MOSFET control have been presented. Switching processes of lockable thyristors with integrated control in nominal modes and under current overloads have been considered. Diagrams of operation of thyristors with external control have been presented. © Allerton Press, Inc. 2024. ISSN 1068-3712, Russian Electrical Engineering, 2024, Vol. 95, No. 4, pp. 298–301. Allerton Press, Inc., 2024. Russian Text The Author(s), 2024, published in Elektrotekhnika, 2024, No. 4, pp. 49–52.