A 22-to-37.8-GHz Low-Gain-Phase-Error Variable-Gain Amplifier With Impedance-Compensation Technique in 65-nm CMOS Process

被引:2
|
作者
Yu, Yiming [1 ,2 ]
Geng, Mengqian [3 ]
Peng, Sirui [3 ]
Li, Junfeng [3 ]
Zhao, Chenxi [3 ]
Liu, Huihua [3 ]
Wu, Yunqiu [3 ]
Kang, Kai [3 ]
机构
[1] Univ Elect Sci & Technol China UESTC, Sch Elect Engn, Chengdu 611731, Peoples R China
[2] UESTC, Chengdu Res Inst, Chengdu 610207, Peoples R China
[3] UESTC, Sch Elect Engn, Chengdu 611731, Peoples R China
来源
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 06期
基金
中国国家自然科学基金;
关键词
Gain; Wideband; Tuning; Circuits; Logic gates; Impedance; Varactors; CMOS; impedance-compensation technique; transformer; variable-gain amplifier (VGA); wideband;
D O I
10.1109/LMWT.2024.3382588
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a wideband variable-gain amplifier (VGA) with an impedance-compensation technique for 5G new radio. To minimize the gain and phase errors of a millimeter-wave VGA in a wide frequency band, a parasitic-capacitance-compensation method based on varactors is proposed to alleviate the input impedance variation of a cross-coupled structure. To extend gain bandwidth and save chip area, compact transformers with various coupling coefficients are employed to design the input, interstage, and output impedance-matching networks. The VGA is demonstrated by using a 65-nm CMOS process. According to the measurement results, the circuit achieves a peak gain of 12 dB with a 3-dB gain bandwidth of 15.8 GHz. Its fractional bandwidth is up to 52.8%. The tested root-mean-square phase and gain errors of the proposed VGA are lower than 1.2(degrees) and 0.1 dB across 24-38 GHz, respectively.
引用
收藏
页码:757 / 760
页数:4
相关论文
共 50 条
  • [21] A 39-GHz Phase-Inverting Variable Gain Power Amplifier in 65-nm CMOS for 5G Communication
    Zhang, Xuexue
    Niu, Xiaokang
    Chen, Qin
    Chen, Xin
    Cheng, Depeng
    Feng, Jing
    Feng, Jun
    Li, Lianming
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (11) : 1303 - 1306
  • [22] A sub 1 V 2.4 GHz CMOS variable-gain low noise amplifier
    Hsiao, CL
    Weng, RM
    Lin, KY
    Wei, HC
    IEICE TRANSACTIONS ON ELECTRONICS, 2004, E87C (06): : 1003 - 1004
  • [23] A 5-6 GHz Low-Noise Amplifier with > 65-dB Variable-Gain Control in 22nm FinFET CMOS Technology
    Yeh, Yi-Shin
    Lee, Hyung-Jin
    2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 371 - 374
  • [24] An 8-18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS
    Gong, Jie
    Li, Wei
    Hu, Jintao
    Ye, Jiao
    Wang, Tao
    JOURNAL OF SEMICONDUCTORS, 2018, 39 (12)
  • [25] A 60 GHz Variable-Gain Low-Noise Amplifier with Low Phase Variation
    Kao, Kun-Yao
    Lu, De-Ren
    Kao, Jui-Chih
    Lin, Kun-You
    2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2016,
  • [26] 17.6 dB Variable-Gain and Variable-Bandwidth Upconverter in 65 nm CMOS for 60 GHz Bands
    Hanay, Oner
    Bierbuesse, David
    Negra, Renato
    2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 249 - 252
  • [27] A 60 GHz transformer-based variable-gain power amplifier in 90nm CMOS
    Brinkhoff, James
    Kang, Kai
    Pham, Duy-Dong
    Lin, Fujiang
    2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS, 2009, : 60 - 63
  • [28] A 7-GHz CMOS Bidirectional Variable Gain Amplifier With Low Gain and Phase Imbalances
    Suh, Bosung
    Kim, Doojung
    Min, Byung-Wook
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2018, 65 (09) : 2669 - 2678
  • [29] A Wideband Variable Gain Power Amplifier With Phase Compensation and PAE Enhancement Techniques in 65 nm CMOS Technology
    Geng, Mengqian
    Yu, Yiming
    Zhao, Chenxi
    Liu, Huihua
    Wu, Yunqiu
    Kang, Kai
    2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT, 2024,
  • [30] A 40-GHz Bandwidth Transimpedance Amplifier with Adjustable Gain-Peaking in 65-nm CMOS
    Ding, Ran
    Xuan, Zhe
    Baehr-Jones, Tom
    Hochberg, Michael
    2014 IEEE 57TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2014, : 965 - 968