Non-Volatile Memory Based on ZnO Thin-Film Transistor with Self-Assembled Au Nanocrystals

被引：1

作者：

Xie, Hui ^{[1
,2
]}

Wu, Hao ^{[1
,2
,3
]}

Liu, Chang ^{[1
,2
]}

机构：

[1] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

[3] Wuhan Univ, Hubei Key Lab Nucl Solid Phys, Wuhan 430072, Peoples R China

来源：

NANOMATERIALS | 2024年 / 14卷 / 08期

关键词：

TFT memory; NVMs; nanocrystals; SoP; ALD; OXIDE-SEMICONDUCTOR; PART I; LAYER; DESIGN;

D O I：

10.3390/nano14080678

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Non-volatile memory based on thin-film transistor is crucial for system-on-panel and flexible electronic systems. Achieving high-performance and reliable thin-film transistor (TFT) memory still remains challenging. Here, for the first time, we present a ZnO TFT memory utilizing self-assembled Au nanocrystals with a low thermal budget, exhibiting excellent memory performance, including a program/erase window of 9.8 V, 29% charge loss extrapolated to 10 years, and remarkable endurance characteristics. Moreover, the memory exhibits favorable on-state characteristics with mobility, subthreshold swing, and current on-off ratio of 17.6 cm2V-1s-1, 0.71 V/dec, and 107, respectively. Our study shows that the fabricated TFT memory has great potential for practical applications.

引用

页数：11

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